Description
PD -97131A IRF6724MPbF IRF6724MTRPbF RoHs Compliant and Halogen Free VDSS VGS RDS(on) RDS(on) l Low Profile (<0.7 mm) 30V max ±20V max 1.9mΩ@ 10V 2.
The IRF6724MPbF combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve the lowest on-state res.
Features
* to-Drain Voltage (V)
1msec
0.1 10.0 100.0 VDS , Drain-toSource Voltage (V)
Fig 10. Typical Source-Drain Diode Forward Voltage
Typical VGS(th) Gate threshold Voltage (V)
150
2.5
Fig11. Maximum Safe Operating Area
ID, Drain Current (A)
2.0
100
ID = 100µA
1.5
50
1.0
0 25 50 75 100 125 150 TC
Applications
* PCB assembly equipment and vapor phase, infra-red or convection soldering techniques, when application note AN-1035 is followed regarding the manufacturing methods and processes. The DirectFET package allows dual sided cooling to maximize thermal transfer in power systems, improving previous best t