IRF6728MPBF Power MOSFET

International Rectifier

Description

PD - 97568 HEXFET® Power MOSFET plus Schottky Diode l RoHS Compliant Containing No Lead and Halogen Free l IRF6728MPbF IRF6728MTRPbF V R R Typ.
The IRF6728MPbF combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFET TM packaging to achieve the lowest on-state re.

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Datasheet Specifications

Part number: IRF6728MPBF
Manufacturer: International Rectifier
File Size: 265.28 KB
Datasheet: IRF6728MPBF-InternationalRectifier.pdf
Description: Power MOSFET

Features

* 25°C Tj = 150°C Single Pulse 0.0 0.1 1.0 10msec 100 10 TJ = 150°C TJ = 25°C TJ = -40°C VGS = 0V 0.1 0.0 0.2 0.4 0.6 0.8 1.0 1.2 VSD, Source-to-Drain Voltage (V) 1 0.01 10.0 100.0 VDS , Drain-toSource Voltage (V) Fig 10. Typical Source-Drain Diode Forward Voltage Typical VGS(th) Gate threshold

Applications

* PCB assembly equipment and vapor phase, infra-red or convection soldering techniques. Application note AN-1035 is followed regarding the manufacturing methods and processes. The DirectFET package allows dual sided cooling to maximize thermal transfer in power systems, improving previous best therma

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IRF6728MPBF Power MOSFET International Rectifier

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