IRF6728MTRPBF

Power MOSFET

International Rectifier

IRF6728MTRPBF Features

* 25°C Tj = 150°C Single Pulse 0.0 0.1 1.0 10msec 100 10 TJ = 150°C TJ = 25°C TJ = -40°C VGS = 0V 0.1 0.0 0.2 0.4 0.6 0.8 1.0 1.2 VSD, Source-to-Drain Voltage (V) 1 0.01 10.0 100.0 VDS , Drain-toSource Voltage (V) Fig 10. Typical Source-Drain Diode Forward Voltage Typical VGS(th) Gate threshold

IRF6728MTRPBF General Description

The IRF6728MPbF combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFET TM packaging to achieve the lowest on-state resistance in a package that has the footprint of a SO-8 and only 0.7 mm profile. The DirectFET package is compatible with existing layout geometries us.

IRF6728MTRPBF Datasheet (265.28 KB)

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Datasheet Details

Part number:

IRF6728MTRPBF

Manufacturer:

International Rectifier

File Size:

265.28 KB

Description:

Power mosfet.
PD - 97568 HEXFET® Power MOSFET plus Schottky Diode l RoHS Compliant Containing No Lead and Halogen Free l IRF6728MPbF IRF6728MTRPbF V R R Typ.

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IRF6728MTRPBF Power MOSFET International Rectifier

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IRF6728MTRPBF Features

IRF6728MTRPBF General Description

Datasheet Details

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