Description
PD - 97568 HEXFET® Power MOSFET plus Schottky Diode l RoHS Compliant Containing No Lead and Halogen Free l IRF6728MPbF IRF6728MTRPbF V R R Typ.
The IRF6728MPbF combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFET TM packaging to achieve the lowest on-state re.
Features
* 25°C Tj = 150°C Single Pulse 0.0 0.1 1.0 10msec
100
10 TJ = 150°C TJ = 25°C TJ = -40°C VGS = 0V 0.1 0.0 0.2 0.4 0.6 0.8 1.0 1.2 VSD, Source-to-Drain Voltage (V)
1
0.01 10.0 100.0 VDS , Drain-toSource Voltage (V)
Fig 10. Typical Source-Drain Diode Forward Voltage
Typical VGS(th) Gate threshold
Applications
* PCB assembly equipment and vapor phase, infra-red or convection soldering techniques. Application note AN-1035 is followed regarding the manufacturing methods and processes. The DirectFET package allows dual sided cooling to maximize thermal transfer in power systems, improving previous best therma