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IRF6794MPbF Power MOSFET

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Description

PD - 97457 IRF6794MPbF IRF6794MTRPbF HEXFET® Power MOSFET plus Schottky Diode ‚ l RoHs Compliant Containing No Lead and Bromide  l Integrated Monol.
The IRF6794MPbF combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve the lowest on-state res.

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Features

* , Drain-to-Source Current (A) 10000 1000 IRF6794MTRPbF OPERATION IN THIS AREA LIMITED BY R DS(on) 100 100µsec 10 1 DC 1msec 0.1 TA = 25°C Tj = 150°C Single Pulse 0.01 0.0 0.1 10msec 1.0 10.0 100.0 VDS , Drain-toSource Voltage (V) Fig 11. Maximum Safe Operating Area 3.0 Typical VGS(th) Gat

Applications

* PCB assembly equipment and vapor phase, infra-red or convection soldering techniques. Application note AN-1035 is followed regarding the manufacturing methods and processes. The DirectFET package allows dual sided cooling to maximize thermal transfer in power systems, improving previous best therma

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