IRF6794MPbF Datasheet, Mosfet, International Rectifier

IRF6794MPbF Features

• Mosfet DS, Drain-to-Source Voltage (V) Fig 4. Typical Output Characteristics 1000 ID, Drain-to-Source Current(A) 100 TJ = 150°C TJ = 25°C 10 TJ = -40°C 1 VDS = 15V ≤60µs PULSE WIDTH 0.1 1.

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IRF6794MPbF

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International Rectifier

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📄 Datasheet

Description:

Power mosfet. The IRF6794MPbF combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve the lo

IRF6794MPbF Application

• Applications PCB assembly equipment and vapor phase, infra-red or convection soldering techniques. Application note AN-1035 is followed regarding t

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IRF6794MPbF

International Rectifier

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