IRF6798MPBF, IRF6798MTRPBF Datasheet - International Rectifier

IRF6798MPBF, IRF6798MTRPBF, HEXFET Power MOSFET plus Schottky Diode

HEXFET® Power MOSFET plus Schottky Diode RoHs Compliant Containing No Lead and Bromide VDSS VGS RDS(on) RDS(on) l Integrated Monolithic Schottky D.
The IRF6798MPbF combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFET TM packaging to achieve the lowest on-state re.

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IRF6798MTRPBF_InternationalRectifier.pdf

IRF6798MPBF Datasheet Preview — This datasheet PDF includes multiple part numbers: IRF6798MPBF, IRF6798MTRPBF. Please refer to the document for exact specifications by model.

Datasheet Details

Part number:

IRF6798MPBF, IRF6798MTRPBF

Manufacturer:

International Rectifier

File Size:

276.09 KB

Description:

HEXFET Power MOSFET plus Schottky Diode

Note:

This datasheet PDF includes multiple part numbers: IRF6798MPBF, IRF6798MTRPBF.
Please refer to the document for exact specifications by model.

Features

* MITED BY RDS(on) 100µsec 100 ID, Drain-to-Source Current (A) ISD, Reverse Drain Current (A) 100 1msec 10 10msec DC 10 T J = 150°C 1 T J = 25°C T J = -40°C VGS = 0V 0 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 VSD, Source-to-Drain Voltage (V) 1 0.1 TA = 25°C TJ = 150°C Single Pulse 0.

Applications

* PCB assembly equipment and vapor phase, infra-red or convection soldering techniques. Application note AN-1035 is followed regarding the manufacturing methods and processes. The DirectFET package allows dual sided cooling to maximize thermal transfer in power systems, improving previous best therma

IRF6798MPBF Distributors

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IRF6798MTRPBF HEXFET Power MOSFET plus Schottky Diode International Rectifier

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