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IRF6798MPBF

HEXFET Power MOSFET plus Schottky Diode

IRF6798MPBF Features

* MITED BY RDS(on) 100µsec 100 ID, Drain-to-Source Current (A) ISD, Reverse Drain Current (A) 100 1msec 10 10msec DC 10 T J = 150°C 1 T J = 25°C T J = -40°C VGS = 0V 0 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 VSD, Source-to-Drain Voltage (V) 1 0.1 TA = 25°C TJ = 150°C Single Pulse 0.

IRF6798MPBF General Description

The IRF6798MPbF combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFET TM packaging to achieve the lowest on-state resistance in a package that has the footprint of a SO-8 and only 0.7 mm profile. The DirectFET package is compatible with existing layout geometries us.

IRF6798MPBF Datasheet (276.09 KB)

Preview of IRF6798MPBF PDF

Datasheet Details

Part number:

IRF6798MPBF

Manufacturer:

International Rectifier

File Size:

276.09 KB

Description:

Hexfet power mosfet plus schottky diode.
HEXFET® Power MOSFET plus Schottky Diode ‚ RoHs Compliant Containing No Lead and Bromide  VDSS VGS RDS(on) RDS(on) l Integrated Monolithic Schottky D.

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IRF6798MPBF HEXFET Power MOSFET plus Schottky Diode International Rectifier

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