Description
The IRF6798MPbF combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFET TM packaging to achieve the lowest on-state resistance in a package that has the footprint of a SO-8 and only 0.7 mm profile.
Features
- MITED BY RDS(on) 100µsec
100
ID, Drain-to-Source Current (A)
ISD, Reverse Drain Current (A)
100
1msec
10
10msec DC
10 T J = 150°C 1 T J = 25°C T J = -40°C VGS = 0V 0 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 VSD, Source-to-Drain Voltage (V)
1
0.1
TA = 25°C TJ = 150°C
Single Pulse 0.01 0.01 0.10 1.00 10.00 100.00 VDS, Drain-to-Source Voltage (V)
Fig 10. Typical Source-Drain Diode Forward Voltage
200
Typical VGS(th) Gate threshold Voltage (V)
Fig11. Maximum Safe Operating Area
2.