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IRF6798MTRPBF HEXFET Power MOSFET plus Schottky Diode

IRF6798MTRPBF Description

HEXFET® Power MOSFET plus Schottky Diode ‚ RoHs Compliant Containing No Lead and Bromide  VDSS VGS RDS(on) RDS(on) l Integrated Monolithic Schottky D.
The IRF6798MPbF combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFET TM packaging to achieve the lowest on-state re.

IRF6798MTRPBF Features

* MITED BY RDS(on) 100µsec 100 ID, Drain-to-Source Current (A) ISD, Reverse Drain Current (A) 100 1msec 10 10msec DC 10 T J = 150°C 1 T J = 25°C T J = -40°C VGS = 0V 0 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 VSD, Source-to-Drain Voltage (V) 1 0.1 TA = 25°C TJ = 150°C Single Pulse 0.

IRF6798MTRPBF Applications

* PCB assembly equipment and vapor phase, infra-red or convection soldering techniques. Application note AN-1035 is followed regarding the manufacturing methods and processes. The DirectFET package allows dual sided cooling to maximize thermal transfer in power systems, improving previous best therma

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Datasheet Details

Part number
IRF6798MTRPBF
Manufacturer
International Rectifier
File Size
276.09 KB
Datasheet
IRF6798MTRPBF_InternationalRectifier.pdf
Description
HEXFET Power MOSFET plus Schottky Diode

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HEXFET Power MOSFET plus Schottky Diode International Rectifier
International Rectifier IRF6798MTRPBF-like datasheet