IRF6795MPbF - Power MOSFET
The IRF6795MPbF combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve the lowest on-state resistance in a package that has the footprint of a SO-8 and only 0.7 mm profile. The DirectFET package is compatible with existing layout geometries use.
PD - 97321C IRF6795MPbF IRF6795MTRPbF HEXFET® Power MOSFET plus Schottky Diode l RoHS Compliant Containing No Lead and Halogen Free Typical values (unless otherwise specified) l Integrated Monolithic Schottky Diode VDSS VGS RDS(on) RDS(on) l Low Profile (<0.7 mm) 25V max ±20V max 1.4mΩ@ 10V 2.4mΩ@ 4.5V l Dual Sided Cooling Compatible l Ultra Low Package Inductance l Optimized for High Frequency Switching Qg tot 35nC Qgd 10nC Qgs2 4.8nC Qrr 34nC Qoss Vgs(th) 27nC 1.8V l I.
