IRF6794MTRPbF Datasheet, Mosfet, International Rectifier

IRF6794MTRPbF Features

• Mosfet DS, Drain-to-Source Voltage (V) Fig 4. Typical Output Characteristics 1000 ID, Drain-to-Source Current(A) 100 TJ = 150°C TJ = 25°C 10 TJ = -40°C 1 VDS = 15V ≤60µs PULSE WIDTH 0.1 1.

PDF File Details

Part number:

IRF6794MTRPbF

Manufacturer:

International Rectifier

File Size:

308.21kb

Download:

📄 Datasheet

Description:

Power mosfet. The IRF6794MPbF combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve the lo

IRF6794MTRPbF Application

• Applications PCB assembly equipment and vapor phase, infra-red or convection soldering techniques. Application note AN-1035 is followed regarding t

TAGS

IRF6794MTRPbF

International Rectifier

📁 Related Datasheet

IRF6794MPbF - Power MOSFET (International Rectifier)
PD - 97457 IRF6794MPbF IRF6794MTRPbF HEXFET® Power MOSFET plus Schottky Diode ‚ l RoHs Compliant Containing No Lead and Bromide  l Integrated Monol.

IRF6795MPbF - Power MOSFET (International Rectifier)
PD - 97321C IRF6795MPbF IRF6795MTRPbF HEXFET® Power MOSFET plus Schottky Diode ‚ l RoHS Compliant Containing No Lead and Halogen Free  Typical val.

IRF6795MTRPbF - Power MOSFET (International Rectifier)
PD - 97321C IRF6795MPbF IRF6795MTRPbF HEXFET® Power MOSFET plus Schottky Diode ‚ l RoHS Compliant Containing No Lead and Halogen Free  Typical val.

IRF6797MPbF - HEXFET Power MOSFET plus Schottky Diode (International Rectifier)
PD - 97320A IRF6797MPbF IRF6797MTRPbF HEXFET® Power MOSFET plus Schottky Diode ‚ l RoHs Compliant Containing No Lead and Bromide  l Integrated Mon.

IRF6797MTRPbF - HEXFET Power MOSFET plus Schottky Diode (International Rectifier)
PD - 97320A IRF6797MPbF IRF6797MTRPbF HEXFET® Power MOSFET plus Schottky Diode ‚ l RoHs Compliant Containing No Lead and Bromide  l Integrated Mon.

IRF6798MPBF - HEXFET Power MOSFET plus Schottky Diode (International Rectifier)
HEXFET® Power MOSFET plus Schottky Diode ‚ RoHs Compliant Containing No Lead and Bromide  VDSS VGS RDS(on) RDS(on) l Integrated Monolithic Schottky D.

IRF6798MTRPBF - HEXFET Power MOSFET plus Schottky Diode (International Rectifier)
HEXFET® Power MOSFET plus Schottky Diode ‚ RoHs Compliant Containing No Lead and Bromide  VDSS VGS RDS(on) RDS(on) l Integrated Monolithic Schottky D.

IRF6702M2DTR1PbF - Power MOSFET (International Rectifier)
Applications l Dual Common Drain Control MOSFETs for Multiphase DC-DC Converters Features l Replaces Two discrete high side MOSFETs l Optimized for Hi.

IRF6702M2DTRPbF - Power MOSFET (International Rectifier)
Applications l Dual Common Drain Control MOSFETs for Multiphase DC-DC Converters Features l Replaces Two discrete high side MOSFETs l Optimized for Hi.

IRF6706S2TR1PBF - DirectFET Power MOSFET (International Rectifier)
PD - 97485 IRF6706S2TRPbF IRF6706S2TR1PbF l RoHS Compliant and Halogen Free l Low Profile (<0.7 mm) l Dual Sided Cooling Compatible l Ultra Low Packa.