IRF6794MTRPbF - Power MOSFET
The IRF6794MPbF combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve the lowest on-state resistance in a package that has the footprint of a SO-8 and only 0.7 mm profile. The DirectFET package is compatible with existing layout geometries use.
PD - 97457 IRF6794MPbF IRF6794MTRPbF HEXFET® Power MOSFET plus Schottky Diode l RoHs Compliant Containing No Lead and Bromide l Integrated Monolithic Schottky Diode Typical values (unless otherwise specified) VDSS VGS RDS(on) RDS(on) l Low Profile (<0.7 mm) 25V max ±20V max 1.3mΩ@ 10V 2.3mΩ@ 4.5V l Dual Sided Cooling Compatible l Low Package Inductance l Optimized for High Frequency Switching Qg tot 31nC Qgd 11nC Qgs2 4.4nC Qrr 51nC Qoss Vgs(th) 27nC 1.8V l Ideal for CPU .
IRF6794MTRPbF Features
* , Drain-to-Source Current (A)
10000 1000
IRF6794MTRPbF
OPERATION IN THIS AREA LIMITED BY R DS(on)
100 100µsec
10
1 DC
1msec
0.1 TA = 25°C Tj = 150°C Single Pulse
0.01
0.0 0.1
10msec 1.0 10.0 100.0
VDS , Drain-toSource Voltage (V)
Fig 11. Maximum Safe Operating Area
3.0
Typical VGS(th) Gat