Description
PD - 97457 IRF6794MPbF IRF6794MTRPbF HEXFET® Power MOSFET plus Schottky Diode l RoHs Compliant Containing No Lead and Bromide l Integrated Monol.
The IRF6794MPbF combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve the lowest on-state res.
Features
* , Drain-to-Source Current (A)
10000 1000
IRF6794MTRPbF
OPERATION IN THIS AREA LIMITED BY R DS(on)
100 100µsec
10
1 DC
1msec
0.1 TA = 25°C Tj = 150°C Single Pulse
0.01
0.0 0.1
10msec 1.0 10.0 100.0
VDS , Drain-toSource Voltage (V)
Fig 11. Maximum Safe Operating Area
3.0
Typical VGS(th) Gat
Applications
* PCB assembly equipment and vapor phase, infra-red or convection soldering techniques. Application note AN-1035 is followed regarding the manufacturing methods and processes. The DirectFET package allows dual sided cooling to maximize thermal transfer in power systems, improving previous best therma