IRF6794MTRPbF

Power MOSFET

International Rectifier

IRF6794MTRPbF Features

* , Drain-to-Source Current (A) 10000 1000 IRF6794MTRPbF OPERATION IN THIS AREA LIMITED BY R DS(on) 100 100µsec 10 1 DC 1msec 0.1 TA = 25°C Tj = 150°C Single Pulse 0.01 0.0 0.1 10msec 1.0 10.0 100.0 VDS , Drain-toSource Voltage (V) Fig 11. Maximum Safe Operating Area 3.0 Typical VGS(th) Gat

IRF6794MTRPbF General Description

The IRF6794MPbF combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve the lowest on-state resistance in a package that has the footprint of a SO-8 and only 0.7 mm profile. The DirectFET package is compatible with existing layout geometries use.

IRF6794MTRPbF Datasheet (308.21 KB)

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IRF6794MTRPbF

Manufacturer:

International Rectifier

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308.21 KB

Description:

Power mosfet.
PD - 97457 IRF6794MPbF IRF6794MTRPbF HEXFET® Power MOSFET plus Schottky Diode l RoHs Compliant Containing No Lead and Bromide l Integrated Monol.

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IRF6794MTRPbF Power MOSFET International Rectifier

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IRF6794MTRPbF Features

IRF6794MTRPbF General Description

Datasheet Details

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