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IRF6797MTRPbF

HEXFET Power MOSFET plus Schottky Diode

IRF6797MTRPbF Features

* ypical Source-Drain Diode Forward Voltage 220 200 180 160 140 120 100 80 60 40 20 0 25 50 75 100 125 150 TC , Case Temperature (°C) Fig 12. Maximum Drain Current vs. Case Temperature 1200 1000 800 Typical V GS(th) Gate threshold Voltage (V) ID, Drain-to-Source Current (A) 1000 100 10 IRF6797MTRP

IRF6797MTRPbF General Description

The IRF6797MPbF combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve the lowest on-state resistance in a package that has the footprint of a SO-8 and only 0.7 mm profile. The DirectFET package is compatible with existing layout geometries us.

IRF6797MTRPbF Datasheet (235.67 KB)

Preview of IRF6797MTRPbF PDF

Datasheet Details

Part number:

IRF6797MTRPbF

Manufacturer:

International Rectifier

File Size:

235.67 KB

Description:

Hexfet power mosfet plus schottky diode.
PD - 97320A IRF6797MPbF IRF6797MTRPbF HEXFET® Power MOSFET plus Schottky Diode ‚ l RoHs Compliant Containing No Lead and Bromide  l Integrated Mon.

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IRF6797MTRPbF HEXFET Power MOSFET plus Schottky Diode International Rectifier

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