IRF6797MTRPbF Datasheet, Diode, International Rectifier

IRF6797MTRPbF Features

• Diode ID, Drain-to-Source Current (A) 1 2.5V 0.1 0.1 1 ≤60µs PULSE WIDTH Tj = 25°C 10 100 VDS, Drain-to-Source Voltage (V) Fig 4. Typical Output Characteristics 1000 100 VDS = 15V ≤

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IRF6797MTRPbF

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International Rectifier

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📄 Datasheet

Description:

Hexfet power mosfet plus schottky diode. The IRF6797MPbF combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve the l

IRF6797MTRPbF Application

• Applications PCB assembly equipment and vapor phase, infra-red or convection soldering techniques. Application note AN-1035 is followed regarding t

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IRF6797MTRPbF

International Rectifier

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