IRF6797MTRPbF - HEXFET Power MOSFET plus Schottky Diode
The IRF6797MPbF combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve the lowest on-state resistance in a package that has the footprint of a SO-8 and only 0.7 mm profile. The DirectFET package is compatible with existing layout geometries us.
PD - 97320A IRF6797MPbF IRF6797MTRPbF HEXFET® Power MOSFET plus Schottky Diode l RoHs Compliant Containing No Lead and Bromide l Integrated Monolithic Schottky Diode Typical values (unless otherwise specified) VDSS VGS RDS(on) RDS(on) l Low Profile (<0.7 mm) 25V max ±20V max 1.1mΩ@ 10V 1.8mΩ@ 4.5V l Dual Sided Cooling Compatible l Ultra Low Package Inductance l Optimized for High Frequency Switching Qg tot 45nC Qgd 13nC Qgs2 6.2nC Qrr 38nC Qoss 38nC Vgs(th) 1.8V l Ideal.
IRF6797MTRPbF Features
* ypical Source-Drain Diode Forward Voltage
220 200 180 160 140 120 100
80 60 40 20
0 25 50 75 100 125 150 TC , Case Temperature (°C)
Fig 12. Maximum Drain Current vs. Case Temperature
1200
1000
800
Typical V GS(th) Gate threshold Voltage (V)
ID, Drain-to-Source Current (A)
1000 100 10
IRF6797MTRP