IRFR2605, IRFU2605 Datasheet - International Rectifier

IRFR2605 - Power MOSFET

D VDSS = 55V G RDS(on) = 0.075Ω ID = 19A S Fourth Generation HEXFETs from International Rectifier utilize advanced processing techniques that achieve extremely low on-resistance per silicon area and allow electrostatic discharge protection to be integrated in the gate structure. These benefits, c.

IRFR2605 Features

* LINE TO-252AA. 4 DIMENSIONS SHOWN ARE BEFORE SOLDER DIP, SOLDER DIP MAX. +0.16 (.006). Part Marking Information D-PAK EXAMPLE : THIS IS AN IRFR120 WITH ASSEMBLY LOT CODE 9U1P INTERNATIONAL RECTIFIER LOGO A IRFR 120 9U 1P FIRST PORTION OF PART NUMBER ASSEMBLY LOT CODE SECOND PORTION OF PART NU

IRFU2605_InternationalRectifier.pdf