IRFR2605 - Power MOSFET
D VDSS = 55V G RDS(on) = 0.075Ω ID = 19A S Fourth Generation HEXFETs from International Rectifier utilize advanced processing techniques that achieve extremely low on-resistance per silicon area and allow electrostatic discharge protection to be integrated in the gate structure. These benefits, c.
IRFR2605 Features
* LINE TO-252AA. 4 DIMENSIONS SHOWN ARE BEFORE SOLDER DIP, SOLDER DIP MAX. +0.16 (.006).
Part Marking Information
D-PAK EXAMPLE : THIS IS AN IRFR120 WITH ASSEMBLY LOT CODE 9U1P
INTERNATIONAL RECTIFIER LOGO
A
IRFR 120 9U 1P
FIRST PORTION OF PART NUMBER
ASSEMBLY LOT CODE
SECOND PORTION OF PART NU