IRFR2607ZPbF Datasheet, Mosfet, International Rectifier

IRFR2607ZPbF Features

• Mosfet l Advanced Process Technology l Ultra Low On-Resistance l 175°C Operating Temperature l Fast Switching l Repetitive Avalanche Allowed up to Tjmax l Lead-Free G HEXFET® Power MOSFET D

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Part number:

IRFR2607ZPbF

Manufacturer:

International Rectifier

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333.16kb

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📄 Datasheet

Description:

Power mosfet. This HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Addition

IRFR2607ZPbF Application

• Applications S ID = 42A D-Pak I-Pak IRFR2607ZPbF IRFU2607ZPbF Absolute Maximum Ratings Parameter ID @ TC = 25°C Continuous Drain Current, VGS

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IRFR2607ZPbF

International Rectifier

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