IRGB20B60PD1 Datasheet, Igbt, International Rectifier

IRGB20B60PD1 Features

• Igbt NPT Technology, Positive Temperature Coefficient Lower VCE(SAT) Lower Parasitic Capacitances Minimal Tail Current HEXFRED Ultra Fast Soft-Recovery Co-Pack Diode Tighter Distribution of

PDF File Details

Part number:

IRGB20B60PD1

Manufacturer:

International Rectifier

File Size:

373.91kb

Download:

📄 Datasheet

Description:

Smps igbt.

IRGB20B60PD1 Application

• Applications
• Telecom and Server SMPS P

TAGS

IRGB20B60PD1

International Rectifier

📁 Related Datasheet

IRGB20B60PD1PBF - SMPS IGBT (International Rectifier)
SMPS IGBT PD - 95615 IRGB20B60PD1PbF C WARP2 SERIES IGBT WITH ULTRAFAST SOFT RECOVERY DIODE Applications • • • • • • • • • • • • Tele and Server.

IRGB10B60KD - INSULATED GATE BIPOLAR TRANSISTOR (International Rectifier)
PD - 94382D INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C IRGB10B60KD IRGS10B60KD IRGSL10B60KD VCES = 600V IC = 12A, TC=100.

IRGB10B60KDPBF - INSULATED GATE BIPOLAR TRANSISTOR (International Rectifier)
PD - 94925A INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C IRGB10B60KDPbF IRGS10B60KDPbF IRGSL10B60KDPbF VCES = 600V IC = 12.

IRGB14C40L - INSULATED GATE BIPOLAR TRANSISTOR (International Rectifier)
PD - 93891A Ignition IGBT Features •Most Rugged in Industry •Logic-Level Gate Drive •> 6KV ESD Gate Protection •Low Saturation Voltage •High Self-cla.

IRGB14C40LPBF - IGBT (International Rectifier)
PD - 95193A Ignition IGBT Features • Most Rugged in Industry • Logic-Level Gate Drive • > 6KV ESD Gate Protection • Low Saturation Voltage • High Sel.

IRGB15B60KD - INSULATED GATE BIPOLAR TRANSISTOR (International Rectifier)
PD - 94383D INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C IRGB15B60KD IRGS15B60KD IRGSL15B60KD VCES = 600V IC = 15A, TC=100.

IRGB15B60KDPbF - INSULATED GATE BIPOLAR TRANSISTOR (International Rectifier)
PD - 95194A INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • Low VCE (on) Non Punch Through IGBT Technology. • Low Dio.

IRGB30B60K - INSULATED GATE BIPOLAR TRANSISTOR (International Rectifier)
PD - 94799 INSULATED GATE BIPOLAR TRANSISTOR C IRGB30B60K IRGS30B60K IRGSL30B60K VCES = 600V IC = 50A, TC=100°C at TJ=175°C Features • • • • • Low .

IRGB30B60KPBF - INSULATED GATE BIPOLAR TRANSISTOR (International Rectifier)
PD - 95356 INSULATED GATE BIPOLAR TRANSISTOR C IRGB30B60KPbF IRGS30B60K IRGSL30B60K VCES = 600V IC = 50A, TC=100°C at TJ=175°C Features • • • • • •.

IRGB4045DPbF - INSULATED GATE BIPOLAR TRANSISTOR (International Rectifier)
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • Low VCE (on) Trench IGBT Technology • Low Switching Losses • Maximum J.