IRGB20B60PD1 - SMPS IGBT
IRGB20B60PD1 Features
* NPT Technology, Positive Temperature Coefficient Lower VCE(SAT) Lower Parasitic Capacitances Minimal Tail Current HEXFRED Ultra Fast Soft-Recovery Co-Pack Diode Tighter Distribution of Parameters Higher Reliability n-channel Equivalent MOSFET Parameters RCE(on) typ. = 158mΩ ID (FET equivalent) =
