Part number:
IRGB10B60KD
Manufacturer:
International Rectifier
File Size:
327.20 KB
Description:
Insulated gate bipolar transistor.
IRGB10B60KD_InternationalRectifier.pdf
Datasheet Details
IRGB10B60KD Features
* Low VCE (on) Non Punch Through IGBT Technology.
* Low Diode VF.
* 10µs Short Circuit Capability.
* Square RBSOA.
* Ultrasoft Diode Reverse Recovery Characteristics.
* Positive VCE (on) Temperature Coefficient. G E tsc > 10µs, TJ=150°C Benefits
IRGB10B60KD_InternationalRectifier.pdf
Datasheet Details
IRGB10B60KD
International Rectifier
327.20 KB
Insulated gate bipolar transistor.
IRGB10B60KD Distributor
📁 Related Datasheet
IRGB10B60KDPBF INSULATED GATE BIPOLAR TRANSISTOR (International Rectifier)
IRGB14C40L INSULATED GATE BIPOLAR TRANSISTOR (International Rectifier)
IRGB14C40LPBF IGBT (International Rectifier)
IRGB15B60KD INSULATED GATE BIPOLAR TRANSISTOR (International Rectifier)
IRGB15B60KDPbF INSULATED GATE BIPOLAR TRANSISTOR (International Rectifier)
IRGB20B60PD1 SMPS IGBT (International Rectifier)
IRGB20B60PD1PBF SMPS IGBT (International Rectifier)
IRGB30B60K INSULATED GATE BIPOLAR TRANSISTOR (International Rectifier)