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IRGB15B60KDPbF

INSULATED GATE BIPOLAR TRANSISTOR

IRGB15B60KDPbF Features

* Low VCE (on) Non Punch Through IGBT Technology.

* Low Diode VF.

* 10µs Short Circuit Capability.

* Square RBSOA.

* Ultrasoft Diode Reverse Recovery Characteristics.

* Positive VCE (on) Temperature Coefficient.

* Lead-Free C IRGB15B60KDPbF IR

IRGB15B60KDPbF Datasheet (824.04 KB)

Preview of IRGB15B60KDPbF PDF

Datasheet Details

Part number:

IRGB15B60KDPbF

Manufacturer:

International Rectifier

File Size:

824.04 KB

Description:

Insulated gate bipolar transistor.

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TAGS

IRGB15B60KDPbF INSULATED GATE BIPOLAR TRANSISTOR International Rectifier

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