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IRGB15B60KD

INSULATED GATE BIPOLAR TRANSISTOR

IRGB15B60KD Features

* Low VCE (on) Non Punch Through IGBT Technology. www.DataSheet4U.com

* Low Diode VF.

* 10µs Short Circuit Capability.

* Square RBSOA.

* Ultrasoft Diode Reverse Recovery Characteristics.

* Positive VCE (on) Temperature Coefficient. G E tsc > 10µs, TJ

IRGB15B60KD Datasheet (373.45 KB)

Preview of IRGB15B60KD PDF

Datasheet Details

Part number:

IRGB15B60KD

Manufacturer:

International Rectifier

File Size:

373.45 KB

Description:

Insulated gate bipolar transistor.
PD - 94383D INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C IRGB15B60KD IRGS15B60KD IRGSL15B60KD VCES = 600V IC = 15A, TC=100.

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IRGB15B60KD INSULATED GATE BIPOLAR TRANSISTOR International Rectifier

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