IRGB15B60KD - INSULATED GATE BIPOLAR TRANSISTOR
IRGB15B60KD Features
* Low VCE (on) Non Punch Through IGBT Technology. www.DataSheet4U.com
* Low Diode VF.
* 10µs Short Circuit Capability.
* Square RBSOA.
* Ultrasoft Diode Reverse Recovery Characteristics.
* Positive VCE (on) Temperature Coefficient. G E tsc > 10µs, TJ
