IRGB10B60KDPBF Datasheet - International Rectifier

IRGB10B60KDPBF, INSULATED GATE BIPOLAR TRANSISTOR

PD - 94925A INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C IRGB10B60KDPbF IRGS10B60KDPbF IRGSL10B60KDPbF VCES = 600V IC = 12.

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IRGB10B60KDPBF_InternationalRectifier.pdf

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Datasheet Details

Part number:

IRGB10B60KDPBF

Manufacturer:

International Rectifier

File Size:

391.96 KB

Description:

INSULATED GATE BIPOLAR TRANSISTOR

Features

* Low VCE (on) Non Punch Through IGBT Technology.
* Low Diode VF.
* 10µs Short Circuit Capability.
* Square RBSOA.
* Ultrasoft Diode Reverse Recovery Characteristics.
* Positive VCE (on) Temperature Coefficient.
* Lead-Free G E tsc > 10µs, TJ

IRGB10B60KDPBF Distributors

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IRGB10B60KDPBF INSULATED GATE BIPOLAR TRANSISTOR International Rectifier

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