IRGB10B60KDPBF - INSULATED GATE BIPOLAR TRANSISTOR
IRGB10B60KDPBF Features
* Low VCE (on) Non Punch Through IGBT Technology.
* Low Diode VF.
* 10µs Short Circuit Capability.
* Square RBSOA.
* Ultrasoft Diode Reverse Recovery Characteristics.
* Positive VCE (on) Temperature Coefficient.
* Lead-Free G E tsc > 10µs, TJ
