* Low VCE (on) Non Punch Through IGBT Technology.
* Low Diode VF.
* 10µs Short Circuit Capability.
* Square RBSOA.
* Ultrasoft Diode Reverse Recovery Characteristics.
* Positive VCE (on) Temperature Coefficient.
* Lead-Free G E tsc > 10µs, TJ
IRGB10B60KDPBF Datasheet (391.96 KB)
IRGB10B60KDPBF
International Rectifier
391.96 KB
Insulated gate bipolar transistor.
PD - 94925A
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE
C
IRGB10B60KDPbF IRGS10B60KDPbF IRGSL10B60KDPbF
VCES = 600V IC = 12.
📁 Related Datasheet
IRGB10B60KD INSULATED GATE BIPOLAR TRANSISTOR (International Rectifier)
IRGB14C40L INSULATED GATE BIPOLAR TRANSISTOR (International Rectifier)
IRGB14C40LPBF IGBT (International Rectifier)
IRGB15B60KD INSULATED GATE BIPOLAR TRANSISTOR (International Rectifier)
IRGB15B60KDPbF INSULATED GATE BIPOLAR TRANSISTOR (International Rectifier)
IRGB20B60PD1 SMPS IGBT (International Rectifier)
IRGB20B60PD1PBF SMPS IGBT (International Rectifier)
IRGB30B60K INSULATED GATE BIPOLAR TRANSISTOR (International Rectifier)
IRGB30B60KPBF INSULATED GATE BIPOLAR TRANSISTOR (International Rectifier)
IRGB4045DPbF INSULATED GATE BIPOLAR TRANSISTOR (International Rectifier)
