Datasheet4U Logo Datasheet4U.com
17 views

IRGB10B60KDPBF Datasheet - International Rectifier

IRGB10B60KDPBF - INSULATED GATE BIPOLAR TRANSISTOR

IRGB10B60KDPBF Features

* Low VCE (on) Non Punch Through IGBT Technology.

* Low Diode VF.

* 10µs Short Circuit Capability.

* Square RBSOA.

* Ultrasoft Diode Reverse Recovery Characteristics.

* Positive VCE (on) Temperature Coefficient.

* Lead-Free G E tsc > 10µs, TJ

IRGB10B60KDPBF_InternationalRectifier.pdf

Preview of IRGB10B60KDPBF PDF
IRGB10B60KDPBF Datasheet Preview Page 2 IRGB10B60KDPBF Datasheet Preview Page 3

Datasheet Details

Part number:

IRGB10B60KDPBF

Manufacturer:

International Rectifier

File Size:

391.96 KB

Description:

Insulated gate bipolar transistor.

📁 Related Datasheet

📌 All Tags