IRGB4715DPbF Features
* Low VCE(ON) and Switching Losses 5.5µs Short Circuit SOA Square RBSOA Maximum Junction Temperature 175°C Positive VCE (ON) Temperature Coefficient Lead-Free, RoHs compliant IRGB4715DPbF IRGS4715DPbF Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode C C G E n-channel G CE IRG
IRGS4715DPBF-InternationalRectifier.pdf
Datasheet Details
IRGB4715DPbF, IRGS4715DPBF
International Rectifier
642.58 KB
Insulated gate bipolar transistor.
This datasheet PDF includes multiple part numbers: IRGB4715DPbF, IRGS4715DPBF.
Please refer to the document for exact specifications by model.
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IRGB4715DPbF Distributor
