IRGB5B120KDPBF - INSULATED GATE BIPOLAR TRANSISTOR
(International Rectifier)
PD - 95617
IRGB5B120KDPbF
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE
Features
• Low VCE (on) Non Punch Through IGBT Technol.
IRGB10B60KD - INSULATED GATE BIPOLAR TRANSISTOR
(International Rectifier)
PD - 94382D
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE
C
IRGB10B60KD IRGS10B60KD IRGSL10B60KD
VCES = 600V IC = 12A, TC=100.
IRGB10B60KDPBF - INSULATED GATE BIPOLAR TRANSISTOR
(International Rectifier)
PD - 94925A
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE
C
IRGB10B60KDPbF IRGS10B60KDPbF IRGSL10B60KDPbF
VCES = 600V IC = 12.
IRGB14C40L - INSULATED GATE BIPOLAR TRANSISTOR
(International Rectifier)
PD - 93891A
Ignition IGBT
Features Most Rugged in Industry Logic-Level Gate Drive > 6KV ESD Gate Protection Low Saturation Voltage High Self-cla.
IRGB14C40LPBF - IGBT
(International Rectifier)
PD - 95193A
Ignition IGBT
Features Most Rugged in Industry Logic-Level Gate Drive > 6KV ESD Gate Protection Low Saturation Voltage High Sel.
IRGB15B60KD - INSULATED GATE BIPOLAR TRANSISTOR
(International Rectifier)
PD - 94383D
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE
C
IRGB15B60KD IRGS15B60KD IRGSL15B60KD
VCES = 600V IC = 15A, TC=100.