IRGBC30U

INSULATED GATE BIPOLAR TRANSISTOR

International Rectifier

IRGBC30U Features

* Switching-loss rating includes all "tail" losses

* Optimized for high operating frequency (over 5kHz) See Fig. 1 for Current vs. Frequency curve G E C UltraFast IGBT VCES = 600V VCE(sat) ≤ 3.0V @VGE = 15V, I C = 12A n-channel Description Insulated Gate Bipolar Transistors (IGBTs

IRGBC30U General Description

Insulated Gate Bipolar Transistors (IGBTs) from International Rectifier have higher usable current densities than comparable bipolar transistors, while at the same time having simpler gate-drive requirements of the familiar power MOSFET. They provide substantial benefits to a host of high-voltage, h.

IRGBC30U Datasheet (112.60 KB)

IRGBC30U Datasheet Preview — Preview of IRGBC30U PDF

Datasheet Details

Part number:

IRGBC30U

Manufacturer:

International Rectifier

File Size:

112.60 KB

Description:

Insulated gate bipolar transistor.

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IRGBC30U INSULATED GATE BIPOLAR TRANSISTOR International Rectifier

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IRGBC30U Features

IRGBC30U General Description

Datasheet Details

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