IRGP4065DPBF Datasheet, igbt equivalent, International Rectifier

PDF File Details

Part number: IRGP4065DPBF

Manufacturer: International Rectifier

File Size: 371.03KB

Download: 📄 Datasheet

Description: PDP TRENCH IGBT

Datasheet Preview: IRGP4065DPBF 📥 Download PDF (371.03KB)

IRGP4065DPBF Features and benefits

l Advanced Trench IGBT Technology l Optimized for Sustain and Energy Recovery Circuits in PDP Applications TM) l Low VCE(on) and Energy per Pulse (EPULSE for Improved Pan.

IRGP4065DPBF Application

TM) l Low VCE(on) and Energy per Pulse (EPULSE for Improved Panel Efficiency l High Repetitive Peak Current Capability l.

IRGP4065DPBF Description

This IGBT is specifically designed for applications in Plasma Display Panels. This device utilizes advanced trench IGBT technology to achieve low VCE(on) and low EPULSETM rating per silicon area which improve panel efficiency. Additional features are.

Image gallery

Page 2 of IRGP4065DPBF Page 3 of IRGP4065DPBF

TAGS

IRGP4065DPBF
PDP
TRENCH
IGBT
International Rectifier

📁 Related Datasheet

IRGP4065PBF - PDP TRENCH IGBT (International Rectifier)
IRGP4065PbF PDP TRENCH IGBT Features l Advanced Trench IGBT Technology l Optimized for Sustain and Energy Recovery circuits in PDP applications TM) l .

IRGP4062-EPBF - INSULATED GATE BIPOLAR TRANSISTOR (International Rectifier)
INSULATED GATE BIPOLAR TRANSISTOR Features • Low VCE (ON) Trench IGBT Technology • Low switching losses • Maximum Junction temperature 175 °C • 5 μS s.

IRGP4062D-EPbF - INSULATED GATE BIPOLAR TRANSISTOR (International Rectifier)
IRGB4062DPbF IRGP4062DPbF IRGP4062D-EPbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features C • Low VCE (ON) Trench IG.

IRGP4062DPBF - INSULATED GATE BIPOLAR TRANSISTOR (International Rectifier)
IRGB4062DPbF IRGP4062DPbF IRGP4062D-EPbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features C • Low VCE (ON) Trench IG.

IRGP4063-EPBF - INSULATED GATE BIPOLAR TRANSISTOR (International Rectifier)
PD - 97404 INSULATED GATE BIPOLAR TRANSISTOR Features • • • • • • • • • Low VCE (ON) Trench IGBT Technology Low switching losses Maximum Junction tem.

IRGP4063D-EPBF - INSULATED GATE BIPOLAR TRANSISTOR (International Rectifier)
IRGP4063DPbF IRGP4063D-EPbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • • • • • • • • • • Low VCE (ON) Trench IGBT.

IRGP4063D1-EPBF - INSULATED GATE BIPOLAR TRANSISTOR (International Rectifier)
  IRGP4063D1PbF IRGP4063D1-EPbF Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode VCES = 600V   IC = 60A, TC =100°C tSC 5µs, TJ(.

IRGP4063D1PBF - INSULATED GATE BIPOLAR TRANSISTOR (International Rectifier)
  IRGP4063D1PbF IRGP4063D1-EPbF Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode VCES = 600V   IC = 60A, TC =100°C tSC 5µs, TJ(.

IRGP4063DPBF - INSULATED GATE BIPOLAR TRANSISTOR (International Rectifier)
IRGP4063DPbF IRGP4063D-EPbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • Low VCE (ON) Trench IGBT Technology • L.

IRGP4063PBF - INSULATED GATE BIPOLAR TRANSISTOR (International Rectifier)
PD - 97404 INSULATED GATE BIPOLAR TRANSISTOR Features • • • • • • • • • Low VCE (ON) Trench IGBT Technology Low switching losses Maximum Junction tem.

Since 2006. D4U Semicon.   |   Datasheet4U.com   |   Contact Us   |   Privacy Policy   |   Purchase of parts