* Low VCE (ON) Trench IGBT Technology Low Switching Losses Maximum Junction temperature 175 °C 5 µS short circuit SOA Square RBSOA 100% of the parts tested for 4X rated current (ILM) Positive VCE (ON) T
IRGP4068DPBF Datasheet (258.37 KB)
IRGP4068DPBF
International Rectifier
258.37 KB
Insulated gate bipolar transistor.
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PD - 97250
IRGP4068DPbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRA-LOW VF DIODE FOR INDUCTION HEATING AND SOFT SWITCHING APPLI.
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