IRGP4072DPBF - INSULATED GATE BIPOLAR TRANSISTOR

Product Overview

International Rectifier

Part number	IRGP4072DPBF
Manufacturer	International Rectifier
File Size	385.53 KB
Description	INSULATED GATE BIPOLAR TRANSISTOR
Datasheet	IRGP4072DPBF Datasheet
Additional preview pages of the IRGP4072DPBF datasheet.

Low VCE (ON) Trench IGBT Technology Low switching losses Maximum Junction temperature 150 °C Square RBSOA 100% of the parts tested for clamped inductive load Ultra fast soft Recovery Co-Pak Diode Tight parameter distribution Lead Free Package C IRGP4072DPbF VCES = 300V IC = 40A, TC = 100°C G VCE(on) typ. = 1.46V E Benefits.
High Efficiency in a wide range of.

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Published: Sep 20, 2010 |