* Low VCE (ON) Trench IGBT Technology
* Low Switching Losses
* Maximum Junction temperature 175°C
* 5 µs short circuit SOA
* Square RBSOA
* 100% of the parts tested for ILM
* Positive VCE (ON) Temperature co-efficient
* Ultra-low VF Hy
IRGP4078D-EPBF Datasheet (839.12 KB)
IRGP4078D-EPBF
International Rectifier
839.12 KB
Insulated gate bipolar transistor.
IRGP4078DPbF IRGP4078D-EP C VCES = 600V INOMINAL = 50A G E INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRA-LOW VF DIODE FOR INDUCTION HEATING AND .
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