IRGP4078DPBF Datasheet - International Rectifier

IRGP4078DPBF INSULATED GATE BIPOLAR TRANSISTOR

IRGP4078DPBF Features

* Low VCE (ON) Trench IGBT Technology

* Low Switching Losses

* Maximum Junction temperature 175°C

* 5 µs short circuit SOA

* Square RBSOA

* 100% of the parts tested for ILM

* Positive VCE (ON) Temperature co-efficient

* Ultra-low VF Hy

Datasheet Details

IRGP4078DPBF

International Rectifier

839.12 KB

Insulated gate bipolar transistor.

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