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IRGP4078DPBF, IRGP4078D-EPBF INSULATED GATE BIPOLAR TRANSISTOR

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Description

  IRGP4078DPbF IRGP4078D-EP  C   VCES = 600V INOMINAL = 50A G E INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRA-LOW VF DIODE FOR INDUCTION HEATING AND .

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This datasheet PDF includes multiple part numbers: IRGP4078DPBF, IRGP4078D-EPBF. Please refer to the document for exact specifications by model.
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Datasheet Specifications

Part number
IRGP4078DPBF, IRGP4078D-EPBF
Manufacturer
International Rectifier
File Size
839.12 KB
Datasheet
IRGP4078D-EPBF-InternationalRectifier.pdf
Description
INSULATED GATE BIPOLAR TRANSISTOR
Note
This datasheet PDF includes multiple part numbers: IRGP4078DPBF, IRGP4078D-EPBF.
Please refer to the document for exact specifications by model.

Features

* Low VCE (ON) Trench IGBT Technology
* Low Switching Losses
* Maximum Junction temperature 175°C
* 5 µs short circuit SOA
* Square RBSOA
* 100% of the parts tested for ILM
* Positive VCE (ON) Temperature co-efficient
* Ultra-low VF Hy

IRGP4078DPBF Distributors

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