* Low VCE(ON) and Switching Losses Square RBSOA and Maximum Junction Temperature 175°C Positive VCE (ON) Temperature Coefficient 5μs short circuit SOA Lead-Free, RoHS compliant G Gate C Collector E Emitter Benefits High efficiency in a wide range of applications and switching frequencies Improve
IRGP4640D-EPbF Datasheet (342.51 KB)
IRGP4640D-EPbF
International Rectifier
342.51 KB
Insulated gate bipolar transistor.
VCES = 600V IC = 40A, TC = 100°C
IRGP4640DPbF IRGP4640D-EPbF
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE
C
C
C
tSC 5μ.
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