IRGP4640D-EPbF Features
* Low VCE(ON) and Switching Losses Square RBSOA and Maximum Junction Temperature 175°C Positive VCE (ON) Temperature Coefficient 5μs short circuit SOA Lead-Free, RoHS compliant G Gate C Collector E Emitter Benefits High efficiency in a wide range of applications and switching frequencies Improve
IRGP4640DPbF_InternationalRectifier.pdf
Datasheet Details
IRGP4640D-EPbF, IRGP4640DPbF
International Rectifier
342.51 KB
Insulated gate bipolar transistor.
This datasheet PDF includes multiple part numbers: IRGP4640D-EPbF, IRGP4640DPbF.
Please refer to the document for exact specifications by model.
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