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IRGS8B60K

INSULATED GATE BIPOLAR TRANSISTOR

IRGS8B60K Features

* Low VCE (on) Non Punch Through IGBT Technology. 10µs Short Circuit Capability. Square RBSOA. Positive VCE (on) Temperature Coefficient. C IRGB8B60K IRGS8B60K IRGSL8B60K VCES = 600V IC = 20A, TC=100°C G E tsc>10µs, TJ=150°C Benefits

* Benchmark Effic

IRGS8B60K Datasheet (472.11 KB)

Preview of IRGS8B60K PDF

Datasheet Details

Part number:

IRGS8B60K

Manufacturer:

International Rectifier

File Size:

472.11 KB

Description:

Insulated gate bipolar transistor.

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IRGS8B60K INSULATED GATE BIPOLAR TRANSISTOR International Rectifier

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