IRGS8B60KPbF Features
* Low VCE (on) Non Punch Through IGBT Technology. 10µs Short Circuit Capability. Square RBSOA. Positive VCE (on) Temperature Coefficient. Lead-Free. IRGB8B60KPbF IRGS8B60KPbF IRGSL8B60KPbF C VCES = 600V IC = 20A, TC=100°C G E tsc>10µs, TJ=150°C Be
IRGB8B60KPbF_InternationalRectifier.pdf
Datasheet Details
IRGS8B60KPbF, IRGB8B60KPbF
International Rectifier
453.29 KB
Insulated gate bipolar transistor.
This datasheet PDF includes multiple part numbers: IRGS8B60KPbF, IRGB8B60KPbF.
Please refer to the document for exact specifications by model.
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IRGS8B60KPbF Distributor
