IRGSL6B60KD Datasheet - International Rectifier

IRGSL6B60KD INSULATED GATE BIPOLAR TRANSISTOR

IRGSL6B60KD Features

* Low VCE (on) Non Punch Through IGBT Technology.

* Low Diode VF.

* 10µs Short Circuit Capability.

* Square RBSOA.

* Ultrasoft Diode Reverse Recovery Characteristics.

* Positive VCE (on) Temperature Coefficient.

* TO-220 is available in PbF as

Datasheet Details

IRGSL6B60KD

International Rectifier

349.15 KB

Insulated gate bipolar transistor.

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