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IRF1010NSPBF Power MOSFET

IRF1010NSPBF Description

Advanced Process Technology Ultra Low On-Resistance l Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated l Le.
l l IRF1010NSPbF IRF1010NLPbF HEXFET® Power MOSFET D PD - 95103 VDSS = 55V RDS(on) = 11mΩ G S Absolute Maximum Ratings ID @ TC = 25°C ID @ TC = 1.

IRF1010NSPBF Features

* +  RG VGS
* dv/dt controlled by RG
* ISD controlled by Duty Factor "D"
* D. U. T. - Device Under Test + VDD
* Reverse Polarity of D. U. T for P-Channel http://www. DataSheet4U. net/ Driver Gate Drive P. W. Period D= P. W. Period [VGS=10V ]
* D. U

IRF1010NSPBF Applications

* because of its low internal connection resistance and can dissipate up to 2.0W in a typical surface mount application. The through-hole version (IRF1010NL) is available for lowprofile applications. Advanced HEXFET ® Power MOSFETs from International Rectifier utilize advanced processing techniques t

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Power MOSFET International Rectifier
International Rectifier IRF1010NSPBF-like datasheet