IRF6706S2TR1PBF Description
PD - 97485 IRF6706S2TRPbF IRF6706S2TR1PbF l RoHS Compliant and Halogen Free l Low Profile (<0.7 mm) l Dual Sided Cooling Compatible l Ultra Low Packa.
The IRF6706S2TRPbF combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFET TM packaging to achieve improved performanc.
IRF6706S2TR1PBF Features
* -40°C
10
10
1msec 10msec DC
1
1 VGS = 0V 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 VSD, Source-to-Drain Voltage (V)
0.1
T A = 25°C
T J = 150°C
Single Pulse 0.01 0.01 0.10 1.00 10.00 100.00 VDS, Drain-to-Source Voltage (V)
Fig 10. Typical Source-Drain Diode Forward Voltage
Typical VGS(t
IRF6706S2TR1PBF Applications
* PCB assembly equipment and vapor phase, infra-red or convection soldering techniques, when application note AN-1035 is followed regarding the manufacturing methods and processes. The DirectFET package allows dual sided cooling to maximize thermal transfer in power systems, improving previous best t
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