Description
The IRF6710S2TRPbF combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve improved performance in a package that has the footprint of a MICRO-8 and only 0.7 mm profile.
Features
- d Voltage (V)
30 2.5
ID, Drain Current (A)
20 2.0 ID = 1.0A ID = 1.0mA ID = 250µA
10 1.5 ID = 25µA
EAS, Single Pulse Avalanche Energy (mJ)
0 25 50 75 100 125 150 175 TC , Case Temperature (°C)
Fig 12. Maximum Drain Current vs. Case Temperature
700 TJ = 175°C
600
500
400 TJ = 25°C 300
1.0 -75 -50 -25 0 25 50 75 100 125 150 175 TJ , Temperature ( °C )
Fig 13. Typical Threshold Voltage vs. Junction Temperature
100 ID
TOP 1.8A 80 3.8A
BOTTOM 10A
60
40
Gfs, Forward Transconductance (S)
200
1.