IRF6720S2TR1PBF - Power MOSFET

International Rectifier

IRF6720S2TR1PBF Datasheet Preview — Preview of IRF6720S2TR1PBF PDF

Datasheet Details

Part number	IRF6720S2TR1PBF
Manufacturer	International Rectifier ↗
File Size	254.75 KB
Description	Power MOSFET
Datasheet	IRF6720S2TR1PBF_InternationalRectifier.pdf

IRF6720S2TR1PBF Product details

Description

The IRF6720S2PbF combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve improved performance in a package that has the footprint of a MICRO-8 and only 0.7 mm profile.

Features

1 0.10 1.00 10.00 100.00 VDS, Drain-to-Source Voltage (V) Fig 10. Typical Source-Drain Diode Forward Voltage Typical V GS(th) Gate threshold Voltage (V) Fig 11. Maximum Safe Operating Area 3.5 3.0 2.5 2.0 1.5 1.0 0.5 0.0 -75 -50 -25 0 25 50 75 100 125 150 175 T J , Temperature ( °C ) ID = 25µA ID = 250µA ID = 1.0mA ID = 1.0A 35 30 ID, Drain Current (A) 25 20 15 10 5 0 25 50 75 100 125 150 175 T C , Case Temperature (°C) Fig 12. Maximum Drain Current vs. Case Temperature 50 T J = 25°C G.

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Published: Oct 23, 2013 |