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IRF7807D1PBF - HEXFET Power MOSFET

IRF7807D1PBF Description

PD- 95208 IRF7807D1PbF FETKY™ MOSFET / SCHOTTKY DIODE * Co-Pack N-channel HEXFET® Power MOSFET and Schottky Diode * Ideal for Synchro.
The FETKY™ family of Co-Pack HEXFET®MOSFETs and Schottky diodes offers the designer an innovative, board space saving solution for switching regulator.

IRF7807D1PBF Features

* (Max Values) IRF7807D1 VDS RDS(on) Qg Qsw Qoss 30V 25mΩ 14nC 5.2nC 18.4nC Junction & Storage Temperature Range RθJA www. irf. com 1 5/5/04 IRF7807D1PbF Electrical Characteristics Parameter Drain-to-Source Breakdown Voltage
* Static Drain-Source on Resistance
* Drain-Source Leakage Current

IRF7807D1PBF Applications

* HEXFET power MOSFETs utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. Combining this technology with International Rectifier’s low forward drop Schottky rectifiers results in an extremely efficient device suitable for use in a wide variety of portable

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HEXFET Power MOSFET International Rectifier
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