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IRFR2607ZPbF - Power MOSFET

IRFR2607ZPbF Description

PD - 95953A IRFR2607ZPbF IRFU2607ZPbF .
This HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area.

IRFR2607ZPbF Applications

* S ID = 42A D-Pak I-Pak IRFR2607ZPbF IRFU2607ZPbF Absolute Maximum Ratings Parameter ID @ TC = 25°C Continuous Drain Current, VGS @ 10V (Silicon Limited) ID @ TC = 100°C Continuous Drain Current, VGS @ 10V ™ID @ TC = 25°C Continuous Drain Current, VGS @ 10V (Package Limited) IDM Pulsed Drain C

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Power MOSFET International Rectifier
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