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IRGBC20F INSULATED GATE BIPOLAR TRANSISTOR

IRGBC20F Description

PD - 9.686A IRGBC20F INSULATED GATE BIPOLAR TRANSISTOR .
Insulated Gate Bipolar Transistors (IGBTs) from International Rectifier have higher usable current densities than comparable bipolar transistors, whil.

IRGBC20F Features

* Switching-loss rating includes all "tail" losses

IRGBC20F Applications

* TO-220AB Absolute Maximum Ratings Parameter VCES IC @ TC = 25°C IC @ TC = 100°C ICM ILM VGE EARV PD @ TC = 25°C PD @ TC = 100°C TJ TSTG Collector-to-Emitter Voltage Continuous Collector Current Continuous Collector Current Pulsed Collector Current Clamped Inductive Load Current Gate-to-Emitter Vol

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Datasheet Details

Part number
IRGBC20F
Manufacturer
International Rectifier
File Size
159.24 KB
Datasheet
IRGBC20F-InternationalRectifier.pdf
Description
INSULATED GATE BIPOLAR TRANSISTOR

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INSULATED GATE BIPOLAR TRANSISTOR International Rectifier
International Rectifier IRGBC20F-like datasheet