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IRGP4063D-EPBF INSULATED GATE BIPOLAR TRANSISTOR

IRGP4063D-EPBF Description

IRGP4063DPbF IRGP4063D-EPbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE .

IRGP4063D-EPBF Features

* Low VCE (ON) Trench IGBT Technology Low switching losses Maximum Junction temperature 175 °C 5 μS short circuit SOA Square RBSOA 100% of the parts tested for 4X rated current (ILM) Positive VCE (ON) T

IRGP4063D-EPBF Applications

* Suitable for a wide range of switching frequencies due to Low VCE (ON) and Low Switching losses
* Rugged transient Performance for increased reliability
* Excellent Current sharing in parallel operation
* Low EMI C G E C G IRGP4063DPbF C G E IRGP4063D-EPbF G

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INSULATED GATE BIPOLAR TRANSISTOR International Rectifier
International Rectifier IRGP4063D-EPBF-like datasheet