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IRGS4045DPBF Insulated Gate Bipolar Transistor

IRGS4045DPBF Description

IRGS4045DPbF VCES = 600V IC  6.0A, TC = 100°C INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE CC tsc > 5µs, Tjmax = 175°C VCE.

IRGS4045DPBF Features

* vs. VGE ICE = 6.0A, L=600μH October 10, 2012 Thermal Response ( Z thJC ) IRGS4045DPbF 10 1 D = 0.50 0.1 0.01 0.20 0.10 0.05 0.02 0.01 SINGLE PULSE ( THERMAL RESPONSE ) J J 1 1 R1R1 R2R2 2 2 R3R3 3 3 R4R4 C Ri (°C/W) 0.0301 0.7200 i (sec) 0.000004 0.000067 44 0.7005 0.000

IRGS4045DPBF Applications

* Appliance Motor Drive
* Inverters
* SMPS G Gate C Colletor E Emitter Fe a ture s Low VCE(ON) and switching losses  Benefits High efficiency in a wide range of applications and switching frequencies Square RBSOA and maximum junction temperature 175°C Improved reliability due to

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