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IRGSL6B60KD, IRGB6B60KDPBF INSULATED GATE BIPOLAR TRANSISTOR

IRGSL6B60KD Description

www.DataSheet4U.com PD - 95229 INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C IRGB6B60KDPbF IRGS6B60KD IRGSL6B60KD VCES = 6.

IRGSL6B60KD Features

* Low VCE (on) Non Punch Through IGBT Technology.
* Low Diode VF.
* 10µs Short Circuit Capability.
* Square RBSOA.
* Ultrasoft Diode Reverse Recovery Characteristics.
* Positive VCE (on) Temperature Coefficient.
* TO-220 is available in PbF as

📥 Download Datasheet

This datasheet PDF includes multiple part numbers: IRGSL6B60KD, IRGB6B60KDPBF. Please refer to the document for exact specifications by model.
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Datasheet Details

Part number
IRGSL6B60KD, IRGB6B60KDPBF
Manufacturer
International Rectifier
File Size
349.15 KB
Datasheet
IRGB6B60KDPBF_InternationalRectifier.pdf
Description
INSULATED GATE BIPOLAR TRANSISTOR
Note
This datasheet PDF includes multiple part numbers: IRGSL6B60KD, IRGB6B60KDPBF.
Please refer to the document for exact specifications by model.

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INSULATED GATE BIPOLAR TRANSISTOR International Rectifier
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