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HGTG20N60C3D Datasheet - Intersil Corporation

HGTG20N60C3D N-Channel IGBT

HGTG20N60C3D Features

* of MOSFETs and bipolar transistors. This device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderately between 25oC and 150oC. The IGBT used is development type TA49178. The diode used in anti

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Datasheet Details

Part number:

HGTG20N60C3D

Manufacturer:

Intersil Corporation

File Size:

82.72 KB

Description:

N-channel igbt.

HGTG20N60C3D Distributor

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HGTG20N60C3D HGTG20N60C3D N-Channel IGBT Intersil Corporation