* of MOSFETs and bipolar transistors. This device has the high input impedance of a MOSFET and the low onstate conduction loss of a bipolar transistor. The IGBT is ideal for many high voltage switching applications operating at moderate frequencies where low conduction losses are essential, such as: A
HGTG27N120BN Datasheet (82.97 KB)
HGTG27N120BN
Intersil Corporation
82.97 KB
N-channel igbt.
HGTG27N120BN Data Sheet January 2000 File Number 4482.3 72A, 1200V, NPT Series N-Channel IGBT The HGTG27N120BN is a Non-Punch Through (NPT) IGBT desi.
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