of MOSFETs and bipolar transistors. This device has the high input impedance of a MOSFET and the low onstate conduction loss of a bipolar transistor. The IGBT is ideal fo
✔ HGTG27N120BN Application
operating at moderate frequencies where low conduction losses are essential, such as: AC and DC motor contro
HGTG27N120BN, Fairchild Semiconductor
HGTG27N120BN / HGT5A27N120BN
Data Sheet August 2002
72A, 1200V, NPT Series N-Channel IGBT
The HGTG27N120BN and HGT5A27N120BN are NonPunch Through (NP.
HGTG27N120BN, ON Semiconductor
NPT Series N-Channel IGBT
72 A, 1200 V
HGTG27N120BN
The HGTG27N120BN is Non−Punch Through (NPT) IGBT design. This is a new member of the MOS gated hig.
HGTG27N60C3DR, Intersil
..
CT ODU ODUCT R P PR TE OLE UTE OBS UBSTIT 0B3D E S G30N6 SIBL HGData T S Sheet O P
TM
HGTG27N60C3DR
June 2000 File Number 4262.1
.
HGTG27N60C3R, Intersil
..
T UCT ROD RODUC P E P T E E OL UT OBS UBSTIT 0B3 S N E 0 6 Data TG3 Sheet SIBL HG POS
TM
HGTG27N60C3R
June 2000 File Number 4245..
HGTG20N120C3D, Intersil Corporation
HGTG20N120C3D
Data Sheet October 1998 File Number
4508.1
45A, 1200V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode
The HGTG20N120C3D i.
HGTG20N120CN, Intersil Corporation
HGTG20N120CN
Data Sheet January 2000 File Number 4533.2
63A, 1200V, NPT Series N-Channel IGBT
The HGTG20N120CN is a Non-Punch Through (NPT) IGBT desi.
