* of MOSFETs and bipolar transistors. This device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderately between 25oC and 150oC. The IGBT used is the development type TA49343. The diode used in
HGTG30N60A4D Datasheet (100.45 KB)
HGTG30N60A4D
Intersil Corporation
100.45 KB
N-channel igbt.
HGTG30N60A4D
Data Sheet January 2000 File Number 4830
600V, SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode
The HGTG30N60A4D is a MOS g.
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