Datasheet Specifications
- Part number
- HGTG30N60A4D
- Manufacturer
- Intersil Corporation
- File Size
- 100.45 KB
- Datasheet
- HGTG30N60A4D_IntersilCorporation.pdf
- Description
- N-Channel IGBT
Description
HGTG30N60A4D Data Sheet January 2000 File Number 4830 600V, SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode The HGTG30N60A4D is a MOS g.
Features
* of MOSFETs and bipolar transistors. This device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderately between 25oC and 150oC. The IGBT used is the development type TA49343. The diode used inHGTG30N60A4D Distributors
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