* of MOSFETs and bipolar transistors. The device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderately between 25oC and 150oC. The IGBT is ideal for many high voltage switching applications ope
HGTG40N60B3 Datasheet (76.27 KB)
HGTG40N60B3
Intersil Corporation
76.27 KB
N-channel igbt.
HGTG40N60B3
Data Sheet January 2000 File Number 3943.3
70A, 600V, UFS Series N-Channel IGBT
The HGTG40N60B3 is a MOS gated high voltage switching dev.
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