* of MOSFETs and bipolar transistors. This device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The IGBT is ideal for many high voltage switching applications operating at moderate frequencies where low conduction losses are essential, such as:
HGTP1N120BN Datasheet (71.97 KB)
HGTP1N120BN
Intersil Corporation
71.97 KB
N-channel igbt.
HGTD1N120BNS, HGTP1N120BN Data Sheet January 2000 File Number 4649.2 5.3A, 1200V, NPT Series N-Channel IGBT The HGTD1N120BNS and HGTP1N120BN are Non-.
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