Part number:
HGTP1N120BN
Manufacturer:
Intersil Corporation
File Size:
71.97 KB
Description:
N-channel igbt.
HGTP1N120BN_IntersilCorporation.pdf
Datasheet Details
HGTP1N120BN Features
* of MOSFETs and bipolar transistors. This device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The IGBT is ideal for many high voltage switching applications operating at moderate frequencies where low conduction losses are essential, such as:
HGTP1N120BN_IntersilCorporation.pdf
Datasheet Details
HGTP1N120BN
Intersil Corporation
71.97 KB
N-channel igbt.
HGTP1N120BN Distributor
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