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HGTP3N60A4D - N-Channel IGBT

Intersil Corporation

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Datasheet Details

Part number	HGTP3N60A4D
Manufacturer	Intersil Corporation
File Size	130.32 KB
Description	N-Channel IGBT
Datasheet	HGTP3N60A4D_IntersilCorporation.pdf

HGTP3N60A4D Product details

Features

of MOSFETs and bipolar transistors. These devices have the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderately between 25oC and 150oC. The IGBT used is the development type TA49327. The diode used in anti-parallel is the development type TA49369. This IGBT is ideal for many high voltage switching.

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Published: Mar 23, 2005 |