Datasheet Specifications
- Part number
- HGTP3N60A4D
- Manufacturer
- Intersil Corporation
- File Size
- 130.32 KB
- Datasheet
- HGTP3N60A4D_IntersilCorporation.pdf
- Description
- N-Channel IGBT
Description
HGT1S3N60A4DS, HGTP3N60A4D Data Sheet January 2000 File Number 4818 600V, SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode The HGT1S3N60.
Features
* of MOSFETs and bipolar transistors. These devices have the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderately between 25oC and 150oC. The IGBT used is the development type TA49327. The diode usedHGTP3N60A4D Distributors
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