IRF223 Datasheet (Intersil Corporation)

IRF223, N-Channel Power MOSFET

These are N-Channel enhancement mode silicon gate power ﬁeld effect transistors.

They are advanced power MOSFETs designed, tested, and guaranteed to withstand a speciﬁed level of energy in the breakdown avalanche mode of operation.

All of these power MOSFETs are designed for applications such as swi

IRF223 Features

* 4.0A and 5.0A, 150V and 200V

* rDS(ON) = 0.8Ω and 1.2Ω

* SOA is Power Dissipation Limited

* Nanosecond Switching Speeds

* Linear Transfer Characteristics

* High Input Impedance

* Majority Carrier Device

* Related Literature - TB334 “G