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IRF223 Datasheet - Intersil Corporation

IRF223 N-Channel Power MOSFET

These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power MOSFETs designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. All of these power MOSFETs are designed for applications such as swi.

IRF223 Features

* 4.0A and 5.0A, 150V and 200V

* rDS(ON) = 0.8Ω and 1.2Ω

* SOA is Power Dissipation Limited

* Nanosecond Switching Speeds

* Linear Transfer Characteristics

* High Input Impedance

* Majority Carrier Device

* Related Literature - TB334 “G

IRF223_IntersilCorporation.pdf

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Datasheet Details

Part number:

IRF223

Manufacturer:

Intersil Corporation

File Size:

68.87 KB

Description:

N-channel power mosfet.

IRF223 Distributor

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IRF223 IRF223 N-Channel Power MOSFET Intersil Corporation