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FSL110D - N-Channel Power MOSFET

FSL110D Description

FSL110D, FSL110R Data Sheet October 1998 File Number 4224.3 3.5A, 100V, 0.600 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs The Discrete Pro.

FSL110D Features

* 3.5A, 100V, rDS(ON) = 0.600Ω
* Total Dose - Meets Pre-RAD Specifications to 100K RAD (Si)
* Single Event - Safe Operating Area Curve for Single Event Effects - SEE Immunity for LET of 36MeV/mg/cm2 with VDS up to 80% of Rated Breakdown and VGS of 10V Off-Bias
* Dose R

FSL110D Applications

* Enhanced Power MOSFET immunity to Single Event Effects (SEE), Single Event Gate Rupture (SEGR) in particular, is combined with 100K RADS of total dose hardness to provide devices which are ideally suited to harsh space environments. The dose rate and neutron tolerance necessary for military applica

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Datasheet Details

Part number
FSL110D
Manufacturer
Intersil Corporation
File Size
58.60 KB
Datasheet
FSL110D_IntersilCorporation.pdf
Description
N-Channel Power MOSFET

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N-Channel Power MOSFET Intersil Corporation
Intersil Corporation FSL110D-like datasheet

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