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KHB9D5N20F2, KHB9D5N20P N CHANNEL MOS FIELD EFFECT TRANSISTOR

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Description

SEMICONDUCTOR TECHNICAL DATA General .
KHB9D5N20P/F/F2 N CHANNEL MOS FIELD EFFECT TRANSISTOR KHB9D5N20P A O C F E G B Q I K M L J D N N H P DIM MILLIMETERS _ 0.

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This datasheet PDF includes multiple part numbers: KHB9D5N20F2, KHB9D5N20P. Please refer to the document for exact specifications by model.
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Datasheet Specifications

Part number
KHB9D5N20F2, KHB9D5N20P
Manufacturer
KEC
File Size
106.57 KB
Datasheet
KHB9D5N20P_KEC.pdf
Description
N CHANNEL MOS FIELD EFFECT TRANSISTOR
Note
This datasheet PDF includes multiple part numbers: KHB9D5N20F2, KHB9D5N20P.
Please refer to the document for exact specifications by model.

Features

* VDSS=200V, ID=9.5A Drain-Source ON Resistance : RDS(ON)=400m Qg(typ. )=18.5nC @VGS = 10V 15.95 MAX 1.3+0.1/-0.05 _ 0.1 0.8 + _ 0.2 3.6 + _ 0.1 2.8 + 3.7 0.5+0.1/-0.05 1.5 _ 0.3 13.08 + 1.46 _ 0.1 1.4 + _ 0.1 1.27 + _ 0.2 2.54 + _ 4.5 + 0.2 _ 0.2 2.4 + _ 0.2 9.2 + 1. GATE 2. DRAIN 3. SOURCE P Q TO

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