KPA1716 - MOS Field Effect Transistor
KPA1716 Features
* Low on-state resistance RDS(on)1 = 12.5 m RDS(on)2 = 17 m RDS(on)3 = 19 m TYP. (VGS = -10 V, ID = -4 A) TYP. (VGS = -4.5 V, ID = -4 A) TYP. (VGS = -4.01 V, ID = -4 A) Low Ciss : Ciss = 2100 pF TYP. Built-in G-S protection diode Small and surface mount package Absolute Maximum Ratings Ta = 25 Param
