KPA1793 - MOS Field Effect Transistor
KPA1793 Features
* Low on-state resistance N-channel RDS(on)1 = 69 m RDS(on)2 = 72 m RDS(on)3 = 107 m P-channel RDS(on)1 = 115 m RDS(on)2 = 120 m RDS(on)3 = 190 m Low input capacitance N-channel Ciss = 160 pF TYP. P-channel Ciss = 370 pF TYP. Built-in gate protection diode Small and surface mount package MAX. (VGS = 1
