KPA1816 - MOS Field Effect Transistor
KPA1816 Features
* 1.8V drive available Low on-state resistance RDS(on)1 = 15 m RDS(on)2 = 16 m RDS(on)3 = 22.5 m RDS(on)4 = 41.5 m TYP. (VGS = -4.5 V, ID = -4.5 A) TYP. (VGS = -4.0 V, ID = -4.5 A) TYP. (VGS = -2.5 V, ID = -4.5 A) TYP. (VGS = -1.8 V, ID = -2.5 A) TSSOP-8 Unit: mm 1, 2, 3 : Source 4: Gate Built-in G
